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dc breakdown conditioning and breakdown rate of metals and metallic alloys under ultrahigh vacuum

机译:超高真空下金属和金属合金的直流击穿条件和击穿速率

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摘要

RF accelerating structures of the Compact Linear Collider (CLIC) require a material capable of sustaining high electric field with a low breakdown rate and low induced damage. Because of the similarity of many aspects of DC and RF breakdown, a DC breakdown study is underway at CERN in order to test candidate materials and surface preparations, and have a better understanding of the breakdown mechanism under ultra-high vacuum in a simple setup. Conditioning speeds and breakdown fields of several metals and alloys have been measured. The average breakdown field after conditioning ranges from 100 MV/m for Al to 850 MV/m for stainless steel, and is around 170 MV/m for Cu which is the present base-line material for CLIC structures. The results indicate clearly that the breakdown field is limited by the cathode. The presence of a thin cuprous oxide film at the surface of copper electrodes significantly increases the breakdown field. On the other hand, the conditioning speed of Mo is improved by removing oxides at the surface with a vacuum heat treatment, typically at 875°C for 2 hours. Surface finishing treatments of Cu samples only affects the very first breakdowns. More generally, surface treatments have an effect on the conditioning process itself, but not on the average breakdown field reached after the conditioning phase. In analogy to RF, the breakdown probability has been measured in DC with Cu and Mo electrodes. The DC data show similar behaviour as RF as a function of the applied electric field.
机译:紧凑型线性对撞机(CLIC)的RF加速结构需要一种能够承受高电场且击穿率低,感应损伤低的材料。由于DC和RF击穿的许多方面都相似,因此CERN正在进行DC击穿研究,以测试候选材料和表面处理,并通过简单的设置更好地了解超高真空下的击穿机理。已经测量了几种金属和合金的调节速度和击穿场。调节后的平均击穿场范围从Al的100 MV / m到不锈钢的850 MV / m,Cu的约为170 MV / m,Cu是目前的CLIC结构的基础材料。结果清楚地表明,击穿场受到阴极的限制。在铜电极表面存在一层薄的氧化亚铜膜会大大增加击穿场。另一方面,通过在真空热处理中,通常在875℃下进行2小时的去除表面的氧化物,可以提高Mo的调节速度。铜样品的表面处理仅影响最初的击穿。更一般而言,表面处理对调节过程本身有影响,但对调节阶段之后达到的平均击穿场没有影响。与RF相似,已经在带有Cu和Mo电极的DC中测量了击穿概率。根据施加的电场,DC数据显示出与RF类似的行为。

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